DocumentCode :
3359046
Title :
Indium Composition Dependent Threshold Current Density In Strained InGaAs/AlGaAs Quantum Well Lasers
Author :
Sugimoto, M. ; Hamao, N. ; Nishi, K. ; Yokoyama, H.
Author_Institution :
NEC Corporation
fYear :
1990
fDate :
4-9 Nov 1990
Firstpage :
635
Lastpage :
636
Keywords :
Charge carrier lifetime; Current measurement; Electrons; Indium gallium arsenide; Laboratories; Molecular beam epitaxial growth; National electric code; Quantum well lasers; Radiative recombination; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE
Print_ISBN :
0-87942-550-4
Type :
conf
DOI :
10.1109/LEOS.1990.690707
Filename :
690707
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3359046
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