Title :
Dependability analysis of nano-scale FinFET circuits
Author :
Feng Wang ; Yuan Xie ; Bernstein, K. ; Yan Luo
Author_Institution :
Dept. of Comput. Sci. Eng., Pennsylvania State Univ., University Park, PA
Abstract :
FinFET technology has been proposed as a promising alternative for deep sub-micro bulk CMOS technology, because of its better scalability. Previous works have studied the performance or power advantages of FinFET circuits over bulk CMOS circuits. This paper provides the dependability analysis of FinFET circuits, studying the soft error vulnerability of FinFET circuits and the impact of process variation. Our experiments compare FinFET circuits against bulk CMOS circuits in both 32 nm and 45 nm technologies, showing that FinFET circuits have better dependability and scalability, which is indicated by better soft error immunity and less impact of process variation. It is concluded that FinFET-based circuit design is more robust than the bulk CMOS based circuit design
Keywords :
CMOS integrated circuits; integrated circuit reliability; nanoelectronics; 32 nm; 45 nm; FinFET technology; FinFET-based circuit design; bulk CMOS circuits; deep submicron bulk CMOS technology; nanoscale FinFET circuits; process variation impact; soft error vulnerability; CMOS process; CMOS technology; Circuit analysis; Circuit synthesis; Computer science; FinFETs; Logic devices; Random access memory; Scalability; Very large scale integration;
Conference_Titel :
Emerging VLSI Technologies and Architectures, 2006. IEEE Computer Society Annual Symposium on
Conference_Location :
Karlsruhe
Print_ISBN :
0-7695-2533-4
DOI :
10.1109/ISVLSI.2006.35
