New 1200 V MOSFET structure on SOI with SIPOS shielding layer

Author

Funaki, Hideyuki ; Yamaguchi, Yoshihiro ; Hirayama, Keizo ; Nakagawa, Akio

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1998

fDate

3-6 Jun 1998

Firstpage

25

Lastpage

28

Abstract

In this paper, we have experimentally obtained, for the first time, 1200 V lateral diodes and MOSFETs on SOI. The SOI structure is characterized by a SIPOS layer inserted between the silicon layer and the buried oxide. It was found that the new SOI diode breakdown voltage is determined by the conventional bulk p-n junction theory and not by the resurf (reduced surface field) principle

Keywords

buried layers; dielectric thin films; electric breakdown; p-n junctions; power MOSFET; power semiconductor diodes; semiconductor device testing; silicon-on-insulator; 1200 V; MOSFET structure; SIPOS layer; SIPOS shielding layer; SOI; SOI MOSFETs; SOI diode breakdown voltage; SOI structure; Si; Si-SiO₂; bulk p-n junction theory; buried oxide; lateral diodes; reduced surface field principle; resurf principle; silicon layer; Breakdown voltage; Implants; Impurities; Laboratories; MOSFET circuits; Semiconductor devices; Semiconductor diodes; Silicon; Spirals; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702621

Filename

702621