• DocumentCode
    3359606
  • Title

    Pure logic CMOS based embedded Non-Volatile Random Access Memory for low power RFID application

  • Author

    Pan, Liyang ; Luo, Xian ; Yan, Yaru ; Ma, Jirong ; Wu, Dong ; Xu, Jun

  • Author_Institution
    Inst. of Microelectron. of Tsinghua Univ., Beijing
  • fYear
    2008
  • fDate
    21-24 Sept. 2008
  • Firstpage
    197
  • Lastpage
    200
  • Abstract
    Based on a novel two-dimension array architecture, a 1.8 V 0.44 mm2 1 Kbits embedded non-volatile random access memory (NVRAM) IP is developed with 0.18 mum standard logic CMOS process. Several high voltage solutions and circuits are proposed to improve the reliability and safety of the system. Furthermore, the power consumption for read and write operations are controlled under 312 muA and 88 muA respectively. The merits make it suitable for low power RFID application.
  • Keywords
    CMOS logic circuits; low-power electronics; radiofrequency identification; random-access storage; NVRAM; logic CMOS; low power RFID; nonvolatile random access memory; size 0.18 micron; voltage 1.8 V; CMOS logic circuits; CMOS process; Logic arrays; Nonvolatile memory; Power system reliability; Radiofrequency identification; Random access memory; Safety; Standards development; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4244-2018-6
  • Electronic_ISBN
    978-1-4244-2019-3
  • Type

    conf

  • DOI
    10.1109/CICC.2008.4672057
  • Filename
    4672057
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3359606