DocumentCode :
3359686
Title :
Device characteristics of a quasi-SOI power MOSFET
Author :
Matsumoto, Satoshi ; Ishiyama, Toshihiko ; Hiraoka, Yasushi ; Sakai, Tatsuo ; Yachi, Toshiaki ; Ito, Akio ; Arimoto, Yoshihiro
Author_Institution :
NTT, Tokyo, Japan
fYear :
1998
fDate :
3-6 Jun 1998
Firstpage :
29
Lastpage :
32
Abstract :
The device characteristics of a quasi-SOI power MOSFET were investigated to obtain its optimum device structure. Its short channel effect was larger than the conventional SOI power MOSFET. We analyzed this effect and found a way to suppress it
Keywords :
optimisation; power MOSFET; semiconductor device testing; silicon-on-insulator; SOI power MOSFET; Si-SiO2; device characteristics; optimum device structure; quasi-SOI power MOSFET; short channel effect; Bipolar transistors; Body regions; Laboratories; MOSFET circuits; Numerical simulation; Power MOSFET; Silicon; Substrates; Surface resistance; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
ISSN :
1063-6854
Print_ISBN :
0-7803-4752-8
Type :
conf
DOI :
10.1109/ISPSD.1998.702622
Filename :
702622
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3359686
بازگشت