DocumentCode
3359805
Title
A scalable digitalized buffer for gigabit I/O
Author
Lu, Hungwen ; Su, Chauchin ; Liu, Chien-Nan
Author_Institution
Nat. Central Univ., Jhongli
fYear
2008
fDate
21-24 Sept. 2008
Firstpage
241
Lastpage
244
Abstract
A serial I/O composed of inverters and transmission gates only is proposed to achieve high supply voltage scalability and low area overhead. The inverter with an inductive biasing circuit can extend bandwidth, and reduce the SSN simultaneously. With a TSMC 0.18 mum CMOS process, the I/O occupies an area of 0.014 mm2 and operates from 4 Gbps@1.9 V to 1.5 Gbps@1.1 V.
Keywords
CMOS integrated circuits; buffer circuits; CMOS process; gigabit I/O; inductive biasing circuit; inverters; scalable digitalized buffer; serial I/O; supply voltage scalability; transmission gates; Bandwidth; Capacitance; Circuit noise; Driver circuits; Feedback circuits; Inverters; Low voltage; RLC circuits; Resistors; Scalability; Buffer; I/O; SSN;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE
Conference_Location
San Jose, CA
Print_ISBN
978-1-4244-2018-6
Electronic_ISBN
978-1-4244-2019-3
Type
conf
DOI
10.1109/CICC.2008.4672068
Filename
4672068
Link To Document