DocumentCode :
3359970
Title :
Signal integrity analysis of high speed USB IO and interconnection
Author :
Chen, Tinghou ; Luo, Pinghua ; Fu, Huili
Author_Institution :
Bantian Longgang Base, Huawei Technol. (Hisilicon) Co Ltd., Shenzhen, China
fYear :
2009
fDate :
2-4 Dec. 2009
Firstpage :
1
Lastpage :
5
Abstract :
This paper analyzed the signal integrity of high speed USB IO and IC package. Time domain modeling and measurement were studied and compared. The effect of the die junction temperature and the effect of process variations (typical and worst process parameters) were studied. Through the time domain signal integrity analysis, high signal quality and low cost design of high speed USB IO, package and PCB can be implemented.
Keywords :
integrated circuit interconnections; integrated circuit packaging; integrated circuit testing; IC interconnection; IC package; PCB; high speed USB IO; time domain measurement; time domain modeling; time domain signal integrity analysis; Signal analysis; Universal Serial Bus;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Design of Advanced Packaging & Systems Symposium, 2009. (EDAPS 2009). IEEE
Conference_Location :
Shatin, Hong Kong
Print_ISBN :
978-1-4244-5350-4
Electronic_ISBN :
978-1-4244-5351-1
Type :
conf
DOI :
10.1109/EDAPS.2009.5403980
Filename :
5403980
Link To Document :
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