Analysis of frequency-dependent lossy transmission lines driven by CMOS gates

Author

Li, Xiaochun ; Mao, Junfa ; Swaminathan, Madhavan

Author_Institution

Dept. Of Electron. Eng., Shanghai Jiao Tong Univ., Shanghai, China

fYear

2009

fDate

2-4 Dec. 2009

Firstpage

1

Lastpage

4

Abstract

This paper introduces an accurate FDTD-based method for analysis of time domain response of frequency-dependent lossy transmission lines driven by CMOS gates. MOS transistors are modeled as the nonlinear alpha-power law model that includes the carriers´ velocity saturation effect of short-channel devices. The dynamic behavior of CMOS gates during switching is defined in seven operation regions. Skin effects of lossy transmission line are included in the proposed method and analyzed with FDTD. The proposed method is accurate by comparison between the numerical results of the proposed method and the simulation results of SPICE.

Keywords

CMOS logic circuits; MOSFET; finite difference time-domain analysis; logic gates; transmission lines; CMOS gates; MOS transistors; frequency-dependent lossy transmission lines; nonlinear alpha-power law model; Delay; Distributed parameter circuits; Finite difference methods; Frequency; Integrated circuit interconnections; Power transmission lines; Propagation losses; Semiconductor device modeling; Time domain analysis; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Design of Advanced Packaging & Systems Symposium, 2009. (EDAPS 2009). IEEE

Conference_Location

Shatin, Hong Kong

Print_ISBN

978-1-4244-5350-4

Electronic_ISBN

978-1-4244-5351-1

Type

conf

DOI

10.1109/EDAPS.2009.5403982

Filename

5403982