Title :
Substrate integrated high-Q dielectric resonators for low phase noise oscillator
Author :
Zhou, Liang ; Yin, Wen-Yan ; Mao, Jun-Fa
Author_Institution :
Center for Microwave & RF Technol., Shanghai Jiao-Tong Univ., Shanghai, China
Abstract :
This paper presents a substrate integrated dielectric resonators utilizing multilayer printed circuit boards (PCB) for high performance microwave system-on-package applications such as low phase noise oscillators. Via posts are used as for tightly confining electromagnetic energy as a metallic boundary wall so as the dielectric puck could be integrated into the multilayer PCB. The simulated results show that the resonator resonances at TE01¿ mode with a frequency at Ku band. The unloaded Q of the dielectric resonator is around 14,000 at the operating frequency. However, because of the limitation of the height between of the resonator in the multilayer PCB, conductive loss is increased and the unloaded Q of the resonators is reduced to about 3,500. In order to improve the phase noise of an oscillator, a variety of the dielectric resonators are developed to find out the best unloaded Q and correct frequency. EM simulations and measurements show close agreements.
Keywords :
dielectric resonators; millimetre wave oscillators; phase noise; printed circuits; system-on-package; EM simulations; Ku band frequency; TE01¿ mode; conductive loss; dielectric puck; electromagnetic energy; high performance microwave system-on-package; low phase noise oscillator; metallic boundary wall; multilayer PCB; multilayer printed circuit boards; operating frequency; phase noise; substrate integrated high-Q dielectric resonators; Circuit simulation; Dielectric measurements; Dielectric substrates; Frequency; Microwave oscillators; Nonhomogeneous media; Phase noise; Printed circuits; Resonance; Tellurium;
Conference_Titel :
Electrical Design of Advanced Packaging & Systems Symposium, 2009. (EDAPS 2009). IEEE
Conference_Location :
Shatin, Hong Kong
Print_ISBN :
978-1-4244-5350-4
Electronic_ISBN :
978-1-4244-5351-1
DOI :
10.1109/EDAPS.2009.5403983