Title :
A design concept for the low forward voltage drop 4500 V trench IGBT
Author :
Nitta, T. ; Uenishi, A. ; Minato, T. ; Kusunoki, S. ; Takahashi, T. ; Nakamura, H. ; Nakamura, K. ; Aono, S. ; Harada, M.
Author_Institution :
Mitsubishi Electr. Corp., Itami, Japan
Abstract :
A design concept for a new trench IGBT structure for low forward voltage drop is described. The low forward voltage drop can be achieved by minimizing the p-base region to increase the hole density of the n-base near the emitter side, and by simultaneously keeping MOS channel resistance low. For 4500 V devices, the “triplet” type structure (one p-base every three trenches) is the optimum one, and it improves the forward voltage drop by about 10% over the conventional structure
Keywords :
design engineering; electric resistance; hole density; insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; semiconductor device testing; 4500 V; MOS channel resistance; emitter side; forward voltage drop; n-base hole density; p-base region minimization; trench IGBT; trench IGBT design; trench IGBT structure; trenches; triplet type structure; Conductivity; Current density; Insulated gate bipolar transistors; Laboratories; Low voltage; Numerical simulation; Proposals; Shape; Ultra large scale integration;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702625
