• DocumentCode
    3360224
  • Title

    Influence of texturing conditions for copolymer films of vinylidenefluoride/tetrafluoroethylene on remnant polarization and strain-induced structural transformations

  • Author

    Kochervinskii, V.V.

  • Author_Institution
    Troitsk Inst. for Innovations & Fusion Res., Moscow, Russia
  • fYear
    1996
  • fDate
    25-30 Sep 1996
  • Firstpage
    958
  • Lastpage
    963
  • Abstract
    In ferroelectric films of vinylidenefluoride with 6 mol. % tetrafluoroethylene copolymers values remnant Pr and maximum Ps polarization depends on temperature of uniaxial drawing T d. Films with lower Td have high magnitudes of P r and Ps. Data of IR spectroscopy, small-angle X-ray diffraction SAXS and ultrasonic relaxation show that the drawing realized at lower temperatures leads to higher concentrations of conformations of planar zigzag and increases their degree of orientation. Approaching to “ideal monocrystall” texture is a necessary condition to obtain high ferroelectric and piezoelectric characteristics in such systems
  • Keywords
    X-ray scattering; dielectric polarisation; drawing (mechanical); ferroelectric thin films; infrared spectra; piezoelectric thin films; polymer blends; polymer films; polymer structure; solid-state phase transformations; texture; ultrasonic relaxation; IR spectroscopy; ferroelectric film; molecular conformation; monocrystal texture; orientation; piezoelectric characteristics; remnant polarization; saturation polarization; small-angle X-ray scattering; strain-induced structural transformation; texturing; ultrasonic relaxation; uniaxial drawing temperature; vinylidenefluoride/tetrafluoroethylene copolymer; Dielectric measurements; Ferroelectric films; Ferroelectric materials; Hysteresis; Infrared spectra; Polarization; Spectroscopy; Structural engineering; Technological innovation; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 1996. (ISE 9), 9th International Symposium on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-2695-4
  • Type

    conf

  • DOI
    10.1109/ISE.1996.578240
  • Filename
    578240