Title :
Multi-physics characterization of through silicon vias (TSV) in the presence of a periodic EMP
Author :
Wang, Xiao-Peng ; Yin, Wen-Yan
Author_Institution :
Centre for Opt. & EM Res., Zhe Jiang Univ., Hangzhou, China
Abstract :
Multi-physics characterization of multi-layered stacked through silicon vias (TSVs) is performed based on the hybrid time-domain finite element method (FEM), with most temperature-dependent material parameters treated appropriately. Using our developed algorithm, numerical computation is carried out so as to capture transient electro-thermo-mechanical responses of different TSV geometries injected by a periodic EMP, where the effects of thermal accumulation and induced thermal stress are predicted accurately and analyzed in detail. The provided information will be useful for us to enhance TSV reliability.
Keywords :
electromagnetic pulse; finite element analysis; integrated circuit reliability; thermal stresses; three-dimensional integrated circuits; time-domain analysis; TSV geometries; TSV reliability; electro-thermo-mechanical response; hybrid time-domain finite element method; multilayered stacked through silicon vias; multiphysics characterization; periodic EMP; temperature-dependent material parameter; thermal accumulation; thermal stress; EMP radiation effects; Geometry; Integrated circuit interconnections; Silicon; Temperature; Thermal conductivity; Thermal expansion; Thermal stresses; Through-silicon vias; Voltage;
Conference_Titel :
Electrical Design of Advanced Packaging & Systems Symposium, 2009. (EDAPS 2009). IEEE
Conference_Location :
Shatin, Hong Kong
Print_ISBN :
978-1-4244-5350-4
Electronic_ISBN :
978-1-4244-5351-1
DOI :
10.1109/EDAPS.2009.5404006
