Title :
A design concept for the low turn-off loss 4.5 kV trench IGBT
Author :
Takahashi, T. ; Uenishi, A. ; Kusunoki, S. ; Minato, T. ; Nakamura, H. ; Aono, S. ; Nakamura, K. ; Nitta, T. ; Harada, M.
Author_Institution :
Mitsubishi Electr. Corp., Itami, Japan
Abstract :
In this study, we analyze the turn-off behaviour of high voltage trench insulated gate bipolar transistors (IGBTs) by means of numerical simulation. There are two types of trade-off relationship in the turn-off process. The first relationship is between the voltage-rising process and the tail-current process. This depends on the carrier distribution in the on-state and the MOS channel electron current. The second relationship is between the impact ionization and the MOS channel electron current. In this paper, we propose a new IGBT structure that has the minimum turn-off loss, the optimum carrier distribution in the on-state and the optimum Miller-capacitance
Keywords :
capacitance; carrier density; electric current; electron mobility; impact ionisation; insulated gate bipolar transistors; losses; numerical analysis; power bipolar transistors; semiconductor device models; IGBT structure; MOS channel electron current; SiO2-Si; high voltage trench insulated gate bipolar transistors; impact ionization; minimum turn-off loss; numerical simulation; on-state carrier distribution; optimum Miller-capacitance; optimum on-state carrier distribution; tail-current process; trench IGBT; trench IGBT design; turn-off behaviour; turn-off loss; turn-off process; voltage-rising process; Capacitance; Charge carrier density; Circuits; Electrons; Insulated gate bipolar transistors; Laboratories; Low voltage; Numerical simulation; Thyristors; Ultra large scale integration;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702627
