Title :
New 3-D lateral power MOSFETs with ultra low on-resistance
Author :
Uesugi, Tsutomu ; Kodama, Masahito ; Kawaji, Sachiko ; Nakashima, Kenji ; Murase, Yosie ; Hayashi, Eiko ; Mitsushima, Yasuichi ; Tadano, Hiroshi
Author_Institution :
Toyota Central Res. & Dev. Labs. Inc., Aichi, Japan
Abstract :
This paper presents a new 3D lateral power MOSFET which has a double gate and a trench gate/drain structure. The double gate structure decreased its channel resistance, and the trench gate/drain structure decreased its n drift resistance. We realized this structure using solid phase epitaxy and a conventional trench technology. From experimental results, a breakdown voltage of 49.5 V and a specific on-resistance of 42 mΩ·mm2 were obtained
Keywords :
electric breakdown; electric resistance; isolation technology; power MOSFET; semiconductor device testing; solid phase epitaxial growth; 3D lateral power MOSFETs; 49.5 V; SiO2-Si; breakdown voltage; channel resistance; double gate structure; n drift resistance; on-resistance; solid phase epitaxy; specific on-resistance; trench gate/drain structure; trench technology; Automotive electronics; Body regions; Electric resistance; Electrodes; Epitaxial growth; Immune system; MOSFETs; Motor drives; Power supplies; Research and development;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702628
