The tunnelling field effect transistors (TFET): the temperature dependence, the simulation model, and its application

The TFET is an alternative device for deep sub-micron CMOS with very good short channel and leakage characteristics. The paper presents investigations on properties important for circuit implementation: measurements are performed to verify the working principle and the temperature dependence of the TFET. A simulation model is developed and fitted to the silicon results to be able to do circuit design. Using the simulation models for the n-channel and p-channel device, the complementary inverter is analyzed and compared to the standard CMOS implementation.