A 24/77GHz dual-band BiCMOS frequency synthesizer

Author

Jain, Vipul ; Javid, Babak ; Heydari, Payam

Author_Institution

Nanoscale Commun. Integrated Circuits Lab., Univ. of California, Irvine, CA

fYear

2008

fDate

21-24 Sept. 2008

Firstpage

487

Lastpage

490

Abstract

The design of a millimeter-wave dual-band phase-locked frequency synthesizer in a 0.18 mum SiGe BiCMOS technology is presented. All circuits except the voltage controlled oscillators (VCOs) are shared between the two bands. A W-band divide-by-3 frequency divider is used inside the loop after the VCOs to simplify division-ratio reconfiguration. The 0.9 mm² synthesizer chip exhibits a locking range of 23.8-26.95/75.67-78. 5 GHz with a low power consumption of 50-75 mW from a 2.5 V supply. The closed-loop phase noise at 1 MHz offset from the carrier is less than -100 dBc/Hz in both bands. The proposed frequency synthesizer is suitable for integration in direct-conversion transceivers for K/W-band automotive radars and heterodyne receivers for 94 GHz imaging applications.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MIMIC; MMIC; frequency synthesizers; road vehicle radar; transceivers; voltage-controlled oscillators; BiCMOS technology; K/W-band automotive radars; SiGe; direct-conversion transceivers; dual-band frequency synthesizer; frequency 24 GHz; frequency 77 GHz; frequency 90 GHz; heterodyne receivers; millimeter wave frequency synthesizer; power 50 mW to 75 MW; size 0.18 mum; voltage 2.5 V; voltage controlled oscillators; BiCMOS integrated circuits; Dual band; Energy consumption; Frequency conversion; Frequency synthesizers; Germanium silicon alloys; Millimeter wave circuits; Millimeter wave technology; Silicon germanium; Voltage-controlled oscillators; BiCMOS integrated circuits; VCO; automotive radar; dual-band; frequency synthesizer; injection-locked divider; millimeter-wave; phase-locked loop;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE

Conference_Location

San Jose, CA

Print_ISBN

978-1-4244-2018-6

Electronic_ISBN

978-1-4244-2019-3

Type

conf

DOI

10.1109/CICC.2008.4672127

Filename

4672127