Title :
Simulations and measurements of cross-talk phenomena in BiCMOS technology for hard disk drives
Author :
de Cremoux, G. ; Dubois, E. ; Bardy, S. ; Lebailly, J.
Author_Institution :
CNRS, Villeneuve d´Ascq, France
Abstract :
This paper proposes a detailed comparison between three guard ring architectures designed in a BiCMOS process to minimize substrate cross-talk currents injected by a power vertical DMOS switch. The proposed structures consist of isolator and collector regions placed into a p-epi layer at different locations between the power device and the surrounding CMOS structures. Results show that collector guard ring efficiency is improved using a deep and large n-type implanted region preferably located close to the device to protect.
Keywords :
BiCMOS integrated circuits; circuit analysis computing; circuit optimisation; crosstalk; hard discs; integrated circuit design; integrated circuit measurement; ion implantation; isolation technology; power integrated circuits; 2D simulations; BiCMOS technology; collector guard ring efficiency; collector regions; commutation circuit; cross-talk isolation efficiency; deep n-type implanted region; guard ring architectures; hard disk drives; isolator regions; p-epi layer; perturbation current reduction; power vertical DMOS switch; substrate cross-talk currents; surrounding CMOS structures; BiCMOS integrated circuits; Current measurement; Hard disks; Isolators; Monolithic integrated circuits; Power measurement; Power semiconductor switches; Protection; Substrates; Voltage;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553631
