Title :
Simulation Studies of Tunnel Field Effect Transistor (TFET)
Author :
Aswathy, M. ; Biju, Nitha M. ; Komaragiri, Rama
Author_Institution :
Dept. of ECE, Nat. Inst. of Technol., Calicut, India
Abstract :
TFET is proposed as an alternative to Metal Oxide Semiconductor Field Effect Transistor. In these devices, tunneling currents are no longer considered as unwanted parasitics. In this work, the device architecture and performance of both n-type and p-type TFETs with a channel length of 30nm are studied. Synopsis® device simulation tool MEDICI® is used to analyze the device performance. According to simulation results, the threshold voltage of n-type TFET and p-type TFET was initially obtained as 1.5V and -2V respectively using constant current method. Then using transconductance change method, two threshold voltages VTG and VTD were extracted from IDS-VGS and IDS-VDS graphs respectively. An excellent ON/OFF performance was also observed in simulation results.
Keywords :
MOSFET; tunnel transistors; I-V graphs; MEDICI Synopsis device simulation tool; constant current method; metal oxide semiconductor field effect transistor; n-type TFET; p-type TFET; size 30 nm; transconductance change method; tunnel field effect transistor simulation; tunneling currents; two threshold voltages; voltage -2 V; voltage 1.5 V; Capacitance; FETs; Logic gates; MOSFET circuits; Substrates; Threshold voltage; Tunneling; Band-to-Band Tunneling (BTBT); Metal Oxide semicon-ductor Field Effect Transistor (MOSFET); N-type TFET (NTFET); P-type TFET (PTFET); Tunnel Field Effect Transistor (TFET);
Conference_Titel :
Advances in Computing and Communications (ICACC), 2012 International Conference on
Conference_Location :
Cochin, Kerala
Print_ISBN :
978-1-4673-1911-9
DOI :
10.1109/ICACC.2012.31
