VCSEL device modeling and parameter extraction technique

Author

Minoglou, K. ; Halkias, G. ; Kyriakis-Bitzaros, E.D.

Author_Institution

Inst. of Microelectron., Athens

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

14

Lastpage

17

Abstract

An efficient model scheme that combines the non-linear behaviour of the input parasitics with the intrinsic fundamental device rate equations of the Vertical Cavity Surface Emitting Lasers (VCSELs) is proposed. The model parameter values are extracted using a fully defined systematic technique from dc current-optical power-voltage (I-L-V) and ac S11-S21 response measurements. Extraction and simulation procedures are implemented in commercial integrated circuit design tools. Investigation on their accuracy and efficiency is performed by comparing simulation results with the experimental measurements.

Keywords

equivalent circuits; integrated optoelectronics; nonlinear optics; optimisation; semiconductor device models; semiconductor lasers; surface emitting lasers; AC S₁₁-S₂₁ response measurements; DC current-optical power-voltage measurements; VCSEL device modeling; equivalent circuit optimization methodology; input parasitics; integrated circuit design tools; intrinsic fundamental device rate equations; nonlinear behaviour; parameter extraction technique; vertical cavity surface emitting lasers; Circuit simulation; Current measurement; Integrated circuit measurements; Integrated circuit synthesis; Laser modes; Nonlinear equations; Parameter extraction; Power system modeling; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2007. ICECS 2007. 14th IEEE International Conference on

Conference_Location

Marrakech

Print_ISBN

978-1-4244-1377-5

Electronic_ISBN

978-1-4244-1378-2

Type

conf

DOI

10.1109/ICECS.2007.4510919

Filename

4510919