Title :
On-Chip High Voltage Generation With standard process for MEMS
Author :
Zhang, M. ; Llaser, N.
Author_Institution :
Univ. of Paris XI- CNRS, Orsay
Abstract :
In this paper, a fully integrated CMOS on-chip high voltage generation circuit based on charge pump circuits is presented. This high voltage circuit is composed of a hybrid charge pump. It can therefore provide the highest output voltage tolerated by the technology used, which cannot be reached by each individual charge pump. Moreover, the circuit is optimized not only to have a compact structure but also to be realized with only low-voltage transistors, thus a standard process. To make voltage conversion more efficient, the design is made to reduce charge loss to minimum.
Keywords :
CMOS integrated circuits; micromechanical devices; MEMS; charge pump circuits; high voltage circuit; integrated CMOS on-chip high voltage generation circuit; low-voltage transistors; CMOS process; CMOS technology; Capacitance; Capacitors; Charge pumps; Integrated circuit technology; Microelectromechanical devices; Micromechanical devices; Stacking; Voltage;
Conference_Titel :
Electronics, Circuits and Systems, 2007. ICECS 2007. 14th IEEE International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4244-1377-5
Electronic_ISBN :
978-1-4244-1378-2
DOI :
10.1109/ICECS.2007.4510920