• DocumentCode
    3361361
  • Title

    A common-base linear rf power amplifier for 3G cellular applications

  • Author

    Avanzo, Flavio ; De Paola, Francesco M. ; Manstretta, Danilo

  • Author_Institution
    Dipt. di Elettron., Univ. degli Studi di Pavia, Pavia
  • fYear
    2008
  • fDate
    21-24 Sept. 2008
  • Firstpage
    579
  • Lastpage
    582
  • Abstract
    A linear power amplifier for 3G cellular applications is presented. The amplifier operates in common-base configuration and can sustain output voltages in excess of BVCEO. The chip, implemented in a 0.25mum SiGe:C technology, occupies 2.76 mm2. When operated from a 4.5 V supply, the amplifier has a measured power gain of 20 dB at 1.85 GHz. At 1 dB Compression Point, the amplifier delivers 27 dBm with a power-added efficiency of 33%. Saturated output power is 28.2 dBm with 37% power-added efficiency.
  • Keywords
    3G mobile communication; cellular radio; power amplifiers; radiofrequency amplifiers; 3G cellular application; SiGe:C technology; common-base configuration; frequency 1.85 GHz; gain 20 dB; linear RF power amplifier; size 0.25 micron; voltage 4.5 V; CMOS technology; High power amplifiers; Impedance; Operational amplifiers; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4244-2018-6
  • Electronic_ISBN
    978-1-4244-2019-3
  • Type

    conf

  • DOI
    10.1109/CICC.2008.4672151
  • Filename
    4672151
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3361361