Title :
A common-base linear rf power amplifier for 3G cellular applications
Author :
Avanzo, Flavio ; De Paola, Francesco M. ; Manstretta, Danilo
Author_Institution :
Dipt. di Elettron., Univ. degli Studi di Pavia, Pavia
Abstract :
A linear power amplifier for 3G cellular applications is presented. The amplifier operates in common-base configuration and can sustain output voltages in excess of BVCEO. The chip, implemented in a 0.25mum SiGe:C technology, occupies 2.76 mm2. When operated from a 4.5 V supply, the amplifier has a measured power gain of 20 dB at 1.85 GHz. At 1 dB Compression Point, the amplifier delivers 27 dBm with a power-added efficiency of 33%. Saturated output power is 28.2 dBm with 37% power-added efficiency.
Keywords :
3G mobile communication; cellular radio; power amplifiers; radiofrequency amplifiers; 3G cellular application; SiGe:C technology; common-base configuration; frequency 1.85 GHz; gain 20 dB; linear RF power amplifier; size 0.25 micron; voltage 4.5 V; CMOS technology; High power amplifiers; Impedance; Operational amplifiers; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2018-6
Electronic_ISBN :
978-1-4244-2019-3
DOI :
10.1109/CICC.2008.4672151
