Title :
Stacking technology based on 8-inch wafers using direct connection between TSV and micro-bump
Author :
Miyakawa, Nobuaki ; Hashimoto, Eiri ; Maebashi, Takanori ; Nakamura, Natsuo ; Sacho, Yutaka ; Nakayama, Shigeto ; Toyoda, Shinjiro
Author_Institution :
Honda Res. Inst. Japan Co., Ltd., Wako
Abstract :
We have developed a unique TSV structure and evaluated the connectivity between TSV and micro-bump. The connection resistances are less than 0.7 ohm and the capacitance of TSV is less than 3 pF, respectively. The electrical connection between each wafer was almost 100% and the functional yield reached more than 60%.
Keywords :
integrated circuit interconnections; large scale integration; silicon; TSV; connection resistances; microbump; resistance 0.7 ohm; size 8 inch; stacking technology; thru silicon via; wafers; Assembly; Capacitance; Circuits; Contact resistance; Electric resistance; Energy consumption; Large scale integration; Stacking; Through-silicon vias; Wires;
Conference_Titel :
Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2018-6
Electronic_ISBN :
978-1-4244-2019-3
DOI :
10.1109/CICC.2008.4672169
