DocumentCode
3361857
Title
FinFET technology for analog and RF circuits
Author
Parvais, B. ; Subramanian, V. ; Mercha, A. ; Dehan, M. ; Wambacq, P. ; Sanssen, W. ; Groeseneken, G. ; Decoutere, S.
Author_Institution
MEC, Leuven
fYear
2007
fDate
11-14 Dec. 2007
Firstpage
182
Lastpage
185
Abstract
FinFET technology presents a competitive alternative to planar CMOS as it features a better control of the short channel effects. This results in improved digital and analog performances. The radio-frequency (RF) behavior is however affected by a large level of parasitics. In this paper, we explain how technological options and device design affect the FinFET performance. In addition, the challenges and opportunities for both wideband modeling and the design of analog and RF circuits are identified and discussed.
Keywords
MOSFET; analogue integrated circuits; integrated circuit design; radiofrequency integrated circuits; FinFET technology; analog circuit; device design; radio-frequency behavior; radio-frequency circuits; short channel effects; wideband modeling; CMOS technology; Capacitance; Circuits; Degradation; FinFETs; MOSFETs; Radio frequency; Silicon; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2007. ICECS 2007. 14th IEEE International Conference on
Conference_Location
Marrakech
Print_ISBN
978-1-4244-1377-5
Electronic_ISBN
978-1-4244-1378-2
Type
conf
DOI
10.1109/ICECS.2007.4510960
Filename
4510960
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