Title :
Bulk synthesis of long silicon nitride nanowires on silicon wafer
Author :
Liu, Dan ; Shi, Tielin ; Zhang, Lei ; Xi, Shuang ; Tang, Zirong ; Li, Xiaoping ; Lai, Wuxing
Author_Institution :
Wuhan Nat. Lab. for Optoelectron., Huazhong Univ. of Sci. & Technol., Wuhan, China
Abstract :
A Nickel-catalyzed synthesis method was developed to grow large-scale Si3N4 nanowires on silicon wafer in forming gas of N2/H2(5%) under 1200°C. These nanowires consisted of uniform diameter ranging from 50 to 100 nm with length up to 500 μm. Vapor-liquid-solid mechanism was proposed to interpret the nanowire growth procedure. It was characterized that the nanowires were mainly composed of single-crystal α-Si3N4, growing along the [120] direction.
Keywords :
annealing; catalysis; nanofabrication; nanowires; semiconductor growth; silicon compounds; wide band gap semiconductors; Ni-Si; Si3N4; annealing; morphology; nanowire growth; nickel-catalyzed synthesis method; silicon nitride nanowires; silicon wafer; size 50 nm to 100 nm; temperature 1200 degC; vapor-liquid-solid mechanism; wide band gap semiconductors; Educational institutions; Impurities; Nanowires; Nickel; Silicon; Sun;
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE
Conference_Location :
Jeju
Print_ISBN :
978-1-4577-2139-7
DOI :
10.1109/NMDC.2011.6155280
