• DocumentCode
    3362576
  • Title

    In-situ TEM biasing experiments to study thickness-dependent ferroelectric domain switching of Pb(Zr,Ti)O3 films

  • Author

    Shin, Gayoung ; Lee, Ho-Nyung ; Im, Jiseong ; Gu, Gil-Ho ; Oh, Sang Ho

  • Author_Institution
    Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 790-784, Republic of Korea
  • fYear
    2011
  • fDate
    18-21 Oct. 2011
  • Firstpage
    581
  • Lastpage
    582
  • Abstract
    We devised a novel in-situ TEM characterization technique to study the size effects in ferroelectric polarization emerging at nanometer scales. For this purpose, an in-situ TEM holder fitted to a TEM column was used, through which voltage can be applied to a Pb(Zr,Ti)O3 ferroelectric thin film. In-situ observation of the nucleation and growth behaviors of ferroelectric domains will be presented.
  • Keywords
    Diffraction; Education; Electrodes; Epitaxial growth; Nanoscale devices; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE
  • Conference_Location
    Jeju
  • Print_ISBN
    978-1-4577-2139-7
  • Type

    conf

  • DOI
    10.1109/NMDC.2011.6155296
  • Filename
    6155296
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3362576