Integration of thin film resonator devices onto SiGe substrates

Author

Lakin, K. ; Belsick, J.

Author_Institution

TFR Technol. Inc., Bend, OR, USA

fYear

2001

fDate

14-14 Sept. 2001

Firstpage

37

Lastpage

41

Abstract

Bulk acoustic wave resonators and filters have been fabricated over the frequency range from 300 MHz to over 12 GHz. At higher frequencies, it is sometimes desirable to have resonators and filters integrated into the active device substrate. Full integration allows shorter lead lengths and reduced parasitics for filters and resonators used to control oscillator frequency. This paper reports on the initial results of a project to integrate thin film resonators and filters on semiconductor IC substrates, principally SiGe, and the issues associated with full integration.

Keywords

acoustic filters; acoustic microwave devices; acoustic resonators; bulk acoustic wave devices; thin film devices; 300 MHz to 12 GHz; SiGe; SiGe semiconductor IC substrates; SiGe substrates; active device substrate; bulk acoustic wave filters; bulk acoustic wave resonators; filter integration; integration issues; lead lengths; oscillator frequency control; parasitics; resonator integration; thin film filters; thin film resonator device integration; thin film resonators; Acoustic waves; Bulk acoustic wave devices; Frequency; Germanium silicon alloys; Microwave filters; Resonance; Resonator filters; Silicon germanium; Substrates; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-7129-1

Type

conf

DOI

10.1109/SMIC.2001.942337

Filename

942337