High Q inductors and capacitors on Si substrate

Author

Jenei, S. ; Decoutere, S. ; Van Huylenbroeck, S. ; Vanhorebeek, G. ; Nauwelaers, B.

fYear

2001

fDate

14-14 Sept. 2001

Firstpage

64

Lastpage

70

Abstract

In this paper, the impact of conventional silicon technology parameters on the characteristics of passives is studied. For both inductors and capacitors, cost-effective modules, which integrate easily into wiring BEOL (back-end of line) in a conventional silicon technology and provide high Q factor components are presented. For an inductor of 3 nH, designed for 2 GHz frequency applications, and fabricated in thick Cu as an add-on module, Q factor of /spl sim/24 is reached. The metal insulator metal (MIM) capacitor module with outstanding RF performances and a Q factor ranging from 100-1000 in the few GHz frequency range is developed in the Al BEOL. Compact lumped element SPICE models for both components are proposed and verified.

Keywords

MIM devices; Q-factor; SPICE; UHF integrated circuits; circuit analysis computing; inductors; integrated circuit interconnections; integrated circuit metallisation; modules; thin film capacitors; 2 GHz; Al; Al BEOL; Cu; Q factor; Q factor range; RF performance; Si; Si substrate; add-on module; back-end of line; cost-effective modules; high Q capacitors; high Q inductors; lumped element SPICE models; metal insulator metal capacitor; passive component characteristics; silicon technology parameters; wiring BEOL; BiCMOS integrated circuits; CMOS technology; Capacitors; Costs; Inductors; Metal-insulator structures; Q factor; Radio frequency; Radiofrequency integrated circuits; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-7129-1

Type

conf

DOI

10.1109/SMIC.2001.942342

Filename

942342