DocumentCode
3362789
Title
Nano-electromechanical (NEM) memory cells for highly energy-efficient systems
Author
Choi, Woo Young
Author_Institution
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
fYear
2011
fDate
18-21 Oct. 2011
Firstpage
32
Lastpage
37
Abstract
Recent research trend of nano-electromechanical (NEM) nonvolatile memory technology has been reviewed. NEM memory cells are considered as alternative embedded nonvolatile memory cells because they have advantages of CMOS-compatible process, high packaging density, board space saving, low program / erase voltage, large sensing margin, low fabrication cost and short time-to-market. Since the first CMOS-compatible NEM nonvolatile memory cell was proposed, T cell has been proposed for 2-bit operation and H cell has been proposed for 4-bit operation.
Keywords
CMOS integrated circuits; electronics packaging; flash memories; nanoelectromechanical devices; 2-bit operation; 4-bit operation; CMOS-compatible process; H cell; NEM memory cells; T cell; high energy-efficient systems; low program-erase voltage; nanoelectromechanical nonvolatile memory; packaging density; Electrostatics; Force; Materials; Nonvolatile memory; Sensors; Springs; Structural beams;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE
Conference_Location
Jeju
Print_ISBN
978-1-4577-2139-7
Type
conf
DOI
10.1109/NMDC.2011.6155308
Filename
6155308
Link To Document