Title :
Nano-electromechanical (NEM) memory cells for highly energy-efficient systems
Author_Institution :
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
Abstract :
Recent research trend of nano-electromechanical (NEM) nonvolatile memory technology has been reviewed. NEM memory cells are considered as alternative embedded nonvolatile memory cells because they have advantages of CMOS-compatible process, high packaging density, board space saving, low program / erase voltage, large sensing margin, low fabrication cost and short time-to-market. Since the first CMOS-compatible NEM nonvolatile memory cell was proposed, T cell has been proposed for 2-bit operation and H cell has been proposed for 4-bit operation.
Keywords :
CMOS integrated circuits; electronics packaging; flash memories; nanoelectromechanical devices; 2-bit operation; 4-bit operation; CMOS-compatible process; H cell; NEM memory cells; T cell; high energy-efficient systems; low program-erase voltage; nanoelectromechanical nonvolatile memory; packaging density; Electrostatics; Force; Materials; Nonvolatile memory; Sensors; Springs; Structural beams;
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE
Conference_Location :
Jeju
Print_ISBN :
978-1-4577-2139-7
DOI :
10.1109/NMDC.2011.6155308
