Title :
Self-assembled III-V quantum dots: potential for silicon optoelectronics
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
The basic optoelectronic properties of self-forming InGaAs-InAlAs QDs are examined in parallel with their device implementation. Recent results showing remarkably good tolerance to radiation induced point defects and good luminescence emission from InAs-InGaAs QDs grown on dislocation arrays are discussed in terms of an enabling technology which will allow optoelectronics integration with silicon technology.
Keywords :
III-V semiconductors; dislocation arrays; gallium arsenide; indium compounds; integrated optoelectronics; photoluminescence; point defects; radiation effects; self-assembly; semiconductor quantum dots; InAs-InGaAs; InAs-InGaAs QDs; InGaAs-InAlAs; device implementation; dislocation arrays; luminescence emission; optoelectronic properties; optoelectronics integration; radiation induced point defect tolerance; self-assembled III-V quantum dots; self-forming InGaAs-InAlAs QDs; silicon optoelectronics; silicon technology; Capacitive sensors; III-V semiconductor materials; Indium gallium arsenide; Luminescence; Optical films; Quantum dot lasers; Quantum dots; Quantum mechanics; Silicon; US Department of Transportation;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on
Conference_Location :
Ann Arbor, MI, USA
Print_ISBN :
0-7803-7129-1
DOI :
10.1109/SMIC.2001.942345
