Title :
A monolithic IGBT gate driver implemented in a conventional 0.8 μm BiCMOS process
Author :
Ramezani, Mehrdad ; Salama, C.A.T.
Author_Institution :
Toronto Univ., Ont., Canada
Abstract :
This paper discusses the design and implementation of a monolithic gate driver for an insulated gate bipolar transistor (IGBT). The objective is to implement a high voltage (25 V) monolithic gate driver with an efficient protection circuit in a conventional low-voltage (5 V) high-density (0.8 μm) BiCMOS process. Extended drain MOSFETs are used to implement the high-voltage capability in this design
Keywords :
BiCMOS integrated circuits; driver circuits; insulated gate bipolar transistors; integrated circuit design; integrated circuit testing; power MOSFET; power integrated circuits; 0.8 micron; 25 V; 5 V; BiCMOS process; IGBT; extended drain MOSFETs; high voltage monolithic gate driver; high-voltage capability; insulated gate bipolar transistor; low-voltage high-density BiCMOS process; monolithic IGBT gate driver; monolithic gate driver; protection circuit; BiCMOS integrated circuits; Capacitance; Doping; Driver circuits; Insulated gate bipolar transistors; Inverters; MOS devices; MOSFETs; Protection; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702647
