In-situ TEM characterization of nanomaterials and devices

Author

Kim, Moon.J. ; Park, S.Y. ; Cha, D.K. ; Kim, J. ; Floresca, H.C. ; Lu, Ning ; Wang, J.G.

Author_Institution

Univ. of Texas at Dallas, Richardson, TX, USA

fYear

2011

fDate

18-21 Oct. 2011

Firstpage

86

Lastpage

89

Abstract

Electrical properties of nano size devices were directly measured by TEM. Real time observation of phase transition behavior in PRAM revealed that the volume of the crystalline phase is the main factor in determining cell resistance. In the transistor device, we have identified the doping type and area by measuring the I-V curve at the individual nano contact on the specimen. The evolution of the graphene edge structure was controlled and monitored at and up to 1200°C in-situ.

Keywords

electric resistance; electrical conductivity; graphene; nanocontacts; nanostructured materials; phase change memories; semiconductor doping; solid-state phase transformations; transistors; transmission electron microscopy; C; I-V curve; PRAM; TEM characterization; cell resistance; crystalline phase; doping; electrical properties; graphene edge structure; nanocontact; nanomaterials; nanosize device; phase transition; transistor device; Copper; Crystals; Heating; Moon; Switches; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE

Conference_Location

Jeju

Print_ISBN

978-1-4577-2139-7

Type

conf

DOI

10.1109/NMDC.2011.6155318

Filename

6155318