Title :
SiGe-Si-based optoelectronic devices for high-speed communication applications
Author :
Bhattacharya, P. ; Qasaimeh, O. ; Jae-Sung Rieh
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The principles and properties of some SiGe-Si-based optoelectronic devices are described. These include photodiodes, photoreceivers and modulators. InGaAs-GaAs quantum dot lasers grown directly on Si also exhibit promising characteristics.
Keywords :
Ge-Si alloys; III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical modulation; optical receivers; photodiodes; quantum well lasers; semiconductor materials; semiconductor quantum dots; silicon; InGaAs-GaAs; InGaAs-GaAs quantum dot lasers; Si; SiGe-Si; SiGe-Si-based optoelectronic devices; direct laser growth; high-speed communication applications; modulators; photodiodes; photoreceivers; Bandwidth; Diodes; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Optical amplifiers; Optoelectronic devices; Photodiodes; Silicon germanium; Solids;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on
Conference_Location :
Ann Arbor, MI, USA
Print_ISBN :
0-7803-7129-1
DOI :
10.1109/SMIC.2001.942354
