DocumentCode
3363043
Title
Analysis of thermal evolution in power semiconductor modules as lifetime and reliability tool
Author
Pieschel, M. ; Gerstenmaier, Y.C. ; Mitic, G. ; Neumeister, M. ; Seidel, J.
Author_Institution
Energy Sector, Siemens AG, Erlangen, Germany
fYear
2013
fDate
11-13 Dec. 2013
Firstpage
304
Lastpage
308
Abstract
A method is presented for temperature calculations in systems with irregular rapidly varying chip-powers by solution of implicit integral equations, where the dissipated power may depend on chip-temperature itself. For discontinuous power evolution differential equation solvers pose problems in treating thermal equivalent circuits. When no thermal model exists, the method can start directly from measured cool down curves. For user specified mission profiles over long duration, semiconductor module lifetimes are estimated by thermal cycle counting and application of the Palmgren-Miner-rule. For simplified models of chip power dissipation thermal runaway can be observed in case of unfortunate system parameters. A general criterion is inferred for the thermal stability of the system with the help of a quasi steady-state model for the system´s cooling power described by a single thermal resistor.
Keywords
power semiconductor devices; semiconductor device models; semiconductor device reliability; differential equation solvers; discontinuous power evolution; integral equations; power semiconductor modules; reliability tool; semiconductor module lifetimes; temperature calculations; thermal cycle counting; thermal equivalent circuits; thermal evolution; thermal stability; Cooling; Electronic packaging thermal management; Heating; Insulated gate bipolar transistors; Integrated circuit modeling; Mathematical model; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference (EPTC 2013), 2013 IEEE 15th
Conference_Location
Singapore
Print_ISBN
978-1-4799-2832-3
Type
conf
DOI
10.1109/EPTC.2013.6745732
Filename
6745732
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