Title :
Parasitic barrier effects in SiGe HBTs due to p-n junction displacement
Author :
Mathur, N. ; Todorova, D. ; Roenker, K.P.
Author_Institution :
Dept. of Electr. & Comput. Eng. & Comput. Sci., Cincinnati Univ., OH, USA
Abstract :
The effects of displacement of the p-n junction with respect to the SiGe-Si heterojunction at both the emitter and collector junctions have been studied using a commercial numerical device simulator. Parasitic barrier formation at both junctions has been quantified and their degrading effects on HBT performance investigated as a function of junction displacement and bias. The effectiveness of changes in the device´s structure, such as the insertion of an n+ launcher layer at the collector junction, has been investigated in order to reduce device sensitivity to p-n junction displacement while maintaining device performance.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; numerical analysis; p-n junctions; semiconductor device models; semiconductor materials; HBT performance degradation; SiGe HBTs; SiGe-Si; SiGe-Si heterojunction; collector junction; device performance; device sensitivity; device structure; emitter junction; junction bias; junction displacement; n+ launcher layer insertion; numerical device simulator; p-n junction; p-n junction displacement; parasitic barrier effects; parasitic barrier formation; Analytical models; Computer science; Degradation; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Numerical simulation; P-n junctions; Silicon germanium; Temperature;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on
Conference_Location :
Ann Arbor, MI, USA
Print_ISBN :
0-7803-7129-1
DOI :
10.1109/SMIC.2001.942362
