• DocumentCode
    3363216
  • Title

    Impact of SOI History Effect on Random Data Signals

  • Author

    Jenkins, K.A. ; Kim, S. ; Kowalczyk, S.P. ; Friedman, D.

  • Author_Institution
    IBM, Yorktown Heights
  • fYear
    2007
  • fDate
    May 30 2007-June 1 2007
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The impact of silicon-on-insulator (SOI) history effect in communication circuits containing delay chains is experimentally evaluated. In previous work, SOI history has been seen to change data pulse widths by 5% to 15% for fixed data patterns. In contrast, this work shows that data scrambling and DC balance reduce the effect to 1% or less, eliminating history effect as a concern for such communication circuits.
  • Keywords
    CMOS digital integrated circuits; data communication; delays; silicon-on-insulator; telecommunication channels; timing circuits; DC balance reduction; SOI CMOS technologies; SOI history effect; Si; communication circuits; data pulse widths; data scrambling; delay chains; fixed data patterns; random data signals; silicon-on-insulator; Buffer storage; CMOS technology; Circuits; Clocks; Delay effects; History; Logic devices; Silicon on insulator technology; Timing; Voltage; SOI; communications; data; floating body; history effect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    1-4244-0757-5
  • Electronic_ISBN
    1-4244-0757-5
  • Type

    conf

  • DOI
    10.1109/ICICDT.2007.4299531
  • Filename
    4299531
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3363216