DocumentCode
3363248
Title
A Simple MOSFET Model Suitable for Fast Timing Analysis
Author
Nassif, Sani R. ; Booth, Richard V.
Author_Institution
IBM, Austin
fYear
2007
fDate
May 30 2007-June 1 2007
Firstpage
1
Lastpage
6
Abstract
We present a simple MOSFET model which represents a MOSFET as a gate-modulated resistance. Such a model leads to a special structure in the circuit equations which lends itself to rapid evaluation. In spite of its simplicity, the model makes excellent predictions of waveform propagation with a minimum of characterization effort. The parameters of the model are well-correlated with major technology variables, making the model potentially suitable for applications such as variability prediction. The purpose of this model is to provide a basis for analytical work, with special emphasis on timing analysis. This is an area which is currently difficult due to the complexity of current MOSFET models. So after introducing the model, and explaining how it can be characterized, we will propose several application we believe to be good prospects for future research.
Keywords
MOSFET; timing; MOSFET model; circuit equations; gate-modulated resistance; timing analysis; waveform propagation; Capacitance; Equations; Equivalent circuits; Laboratories; Lattices; MOSFET circuits; Newton method; Predictive models; Timing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on
Conference_Location
Austin, TX
Print_ISBN
1-4244-0757-5
Electronic_ISBN
1-4244-0757-5
Type
conf
DOI
10.1109/ICICDT.2007.4299533
Filename
4299533
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