• DocumentCode
    3363369
  • Title

    Design and implementation of driver IC for miniature VC-TCXO module

  • Author

    Won-Hyun Kwon ; Byung-Ryul Ryum ; Fiez, T.S.

  • Author_Institution
    Dept. of Inf. & Commun., Anyang Univ., South Korea
  • fYear
    2001
  • fDate
    14-14 Sept. 2001
  • Firstpage
    226
  • Lastpage
    230
  • Abstract
    In this paper, an analog driver IC for a miniature VC-TCXO for mobile phones is designed, fabricated and tested using the SiGe process. Design parameters and RF performances of the VC-TCXO circuit including crystal and temperature compensation circuits are optimized, and the IC layout pattern is carefully designed to match cost-performance trade-offs at a 19.680 MHz operating frequency. Experimental results show that the implemented prototype VC-TCXO has 10.8 dBm oscillation power level and has 2nd harmonic suppression characteristics of -5.17 dBc below the carrier. Phase noise performance at 30 Hz, 100 Hz, 1 kHz frequency offset are measured as -91.00, -94.67 and -107.17 dBc/Hz, respectively. These results show that the designed IC meets all of the design requirements of a VC-TCXO for cellular phone applications.
  • Keywords
    Ge-Si alloys; analogue integrated circuits; cellular radio; compensation; crystal oscillators; driver circuits; integrated circuit layout; integrated circuit noise; phase noise; semiconductor materials; voltage-controlled oscillators; 19.68 MHz; IC design; IC fabrication; IC layout pattern; IC test; RF performances; SiGe; SiGe process; VC-TCXO; VC-TCXO circuit; analog driver IC; cellular phone applications; cost-performance trade-offs; design parameters; driver IC; frequency offset; miniature VC-TCXO; miniature VC-TCXO module; mobile phones; operating frequency; oscillation power level; phase noise performance; prototype VC-TCXO; second harmonic suppression; temperature compensation circuit; Analog integrated circuits; Circuit testing; Driver circuits; Germanium silicon alloys; Integrated circuit testing; Mobile handsets; Process design; Radio frequency; Silicon germanium; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on
  • Conference_Location
    Ann Arbor, MI, USA
  • Print_ISBN
    0-7803-7129-1
  • Type

    conf

  • DOI
    10.1109/SMIC.2001.942371
  • Filename
    942371