Title :
Experimental static and dynamic characteristics of MOS-controlled thyristor
Author :
Kazimierczuk, Marian K. ; Thirunarayan, Nandakumar ; Nguyen, Bick T. ; Fronista, Gregory L. ; Weimer, Joseph A.
Author_Institution :
Dept. of Electr. Eng., Wright State Univ., Dayton, OH, USA
Abstract :
Experimental results are given for a PMOS-controlled thyristor (PMCT). The static IA-VAK characteristics of a PMCT were measured using a programmable high-power curve tracer for both forward and reverse anode-to-cathode voltage V AK at different temperatures. The characteristics are similar to the ID-VD characteristics of typical p-n junction diodes. The device has a low forward voltage drop at high current levels, e.g. VF(AK) =1.6 V at IA=200 A. The dynamic behavior of the PMCT was measured in a single switch configuration under resistive loading. The transient waveforms of anode current, gate current, anode-to-cathode voltage, and gate-to-anode voltage were observed at turn-on and turn-off for power levels up to 5 kW. The measured turn-on time was 0.3 μs and the measured turn-off time was 2.2 μs. The switching power loss and the conduction power loss were 3 W and 18 W, respectively
Keywords :
losses; metal-insulator-semiconductor devices; semiconductor device testing; thyristors; 0.3 mus; 1.6 V; 18 W; 2.2 mus; 200 A; 3 W; I-V characteristics; PMOS-controlled thyristor; anode current; anode-to-cathode voltage; conduction power loss; curve tracer; dynamic behavior; forward voltage drop; gate current; gate-to-anode voltage; p-n junction diodes; resistive loading; semiconductor device testing; static characteristics; switching power loss; transient waveforms; turn-off; turn-on; Conductivity; Contracts; Impedance; Insulated gate bipolar transistors; Low voltage; MOSFETs; Switches; Temperature; Thyristors; Time measurement;
Conference_Titel :
Industry Applications Society Annual Meeting, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Houston, TX
Print_ISBN :
0-7803-0635-X
DOI :
10.1109/IAS.1992.244416
