Forward blocking comparison of P and N MCTs

Measurements have been conducted evaluating the forward voltage blocking capabilities of epitaxial based MOS controlled thyristor (MCT) device types of both polarities under conditions of elevated temperature (23 to 250°C) and rates of voltage application. Significant differences have been discovered in the blocking behavior of n vs. p MCTs related to the behavior of their lower transistor, which should be taken into account when employing these devices in a power circuit. Other wide-base p and n devices should behave in a similar fashion. Because the breakdown voltage for the F-MCT decreases both with increasing temperature and with dν/dt, the measurable room temperature static blocking voltage capability of this device must be suitably derated for the users´ application