• DocumentCode
    3363494
  • Title

    A novel power GTO thyristor

  • Author

    Silard, Andrei P. ; Duta, Miron J. ; Cercelaru, Sever ; Udrea, Florin

  • Author_Institution
    Dept. of Electron., Bucharest Polytech. Inst., Romania
  • fYear
    1992
  • fDate
    4-9 Oct 1992
  • Firstpage
    1141
  • Abstract
    A novel concept for gate turn-off thyristors (GTOs) is presented. Unlike the conventional GTOs, the new device is fabricated on lightly doped p-substrate and is therefore called the p-GTO. This device has a high gate cathode breakdown voltage, BVGK. Thus, the limitation imposed by the parameter BVGK on the gated turn-off of GTOs is lifted. The device also features the coexistence of anode shorts with reverse blocking capability, and direct access to the wide (p) base
  • Keywords
    thyristors; anode shorts; gate cathode breakdown voltage; gate turn-off thyristors; gated turn-off; p-substrate; power GTO thyristor; reverse blocking; semiconductor doping; Anodes; Avalanche breakdown; Boron alloys; Breakdown voltage; Cathodes; Conductivity; Doping; Force control; Thyristors; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industry Applications Society Annual Meeting, 1992., Conference Record of the 1992 IEEE
  • Conference_Location
    Houston, TX
  • Print_ISBN
    0-7803-0635-X
  • Type

    conf

  • DOI
    10.1109/IAS.1992.244418
  • Filename
    244418
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3363494