MRAM Memory for Embedded and Stand Alone Systems

Author

Durlam, M. ; Chung, Y. ; DeHerrera, M. ; Engel, B.N. ; Grynkewich, G. ; Martino, B. ; Nguyen, B. ; Salter, J. ; Shah, P. ; Slaughter, J.M.

Author_Institution

Freescale Semicond. Inc., Chandler

fYear

2007

fDate

May 30 2007-June 1 2007

Firstpage

1

Lastpage

4

Abstract

Magnetoresistive random access memory (MRAM) is based on magnetic tunnel junction devices integrated with standard CMOS resulting in high-speed read and write, unlimited endurance, and the highest reliability of any non-volatile memory. MRAM is a unique memory technology in that the module is inserted late in the manufacturing process, making MRAM highly compatible with advanced processing. The manufacturing flexibility of MRAM makes it an attractive choice for embedded and stand alone memory systems.

Keywords

CMOS memory circuits; embedded systems; integrated circuit reliability; magnetic storage; magnetic tunnelling; magnetoelectronics; magnetoresistive devices; random-access storage; CMOS; MRAM memory; embedded systems; magnetic tunnel junction devices; magnetoresistive random access memory; manufacturing flexibility; nonvolatile memory reliability; stand alone systems; CMOS technology; Magnetic devices; Magnetic flux; Magnetic semiconductors; Magnetic tunneling; Manufacturing processes; Nonvolatile memory; Polarization; Read-write memory; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on

Conference_Location

Austin, TX

Print_ISBN

1-4244-0757-5

Electronic_ISBN

1-4244-0757-5

Type

conf

DOI

10.1109/ICICDT.2007.4299546

Filename

4299546