Title :
Realization and performance of LDBIMOS transistor
Author :
Kumar, A. ; Thakur, D.K. ; Mahajan, S.K. ; Jasuja, K.L. ; Vyas, P.D.
Author_Institution :
Central Electron. Eng. Res. Inst., Pilani, India
Abstract :
The lateral DMOS merged bipolar transistor (LDBIMOS) in parallel combination has been fabricated using high resistivity p-substrate to handle large currents with superior speed. LDBIMOS has the same structure as a lateral double-diffused MOS transistor (LDMOST) with p-body as the base of an active nonbipolar transistor. The device has been modeled using a process and device computer program and a circuit simulator to optimize the design to obtain a high breakdown voltage, low Ron, and a parasitic-free monolithic merged LDMOS bipolar structure. The influence of gate potential and gate metal over the drift region on Ron has been studied and a merged device with several LDMOS test structures with varying channel width has been designed to study the electrical performance. It has been revealed that additional integration of LDMOST along the LDBIMOS transistor on the same chip with the minimum area concept has improved the turn-off speed of the device from 490 to 270 ns at a current level of 1.3 A
Keywords :
bipolar transistors; digital simulation; electronic engineering computing; insulated gate field effect transistors; semiconductor device models; 1.3 A; 270 ns; LDBIMOS transistor; breakdown voltage; computer program; design; digital simulation; drift region; electrical performance; gate metal; gate potential; lateral DMOS merged bipolar transistor; minimum area concept; performance; resistivity; semiconductor device models; substrates; turn-off speed; Bipolar transistors; Circuit simulation; Circuit testing; Design optimization; Insulation; Integrated circuit technology; MOSFETs; Microelectronics; Portable media players; Thyristors;
Conference_Titel :
Industry Applications Society Annual Meeting, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Houston, TX
Print_ISBN :
0-7803-0635-X
DOI :
10.1109/IAS.1992.244419
