• DocumentCode
    3363513
  • Title

    Importance of Oxygen Vacancies in High K Gate Dielectrics

  • Author

    Robertson, John ; Xiong, Ka ; Tse, Koon-Yiu

  • Author_Institution
    Cambridge Univ., Cambridge
  • fYear
    2007
  • fDate
    May 30 2007-June 1 2007
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    High dielectric constant (K) gate dielectrics have been intensively developed to overcome problems of transient charge trapping, threshold voltage shifts and Fermi level pinning of the gate electrode. Most of these problems can be traced to the effect of oxygen vacancies, whose role is summarized in this paper.
  • Keywords
    dielectric materials; electrodes; permittivity; Fermi level pinning; gate electrode; high K gate dielectrics; high dielectric constant; oxygen vacancies; threshold voltage shifts; transient charge trapping; Annealing; Degradation; Dielectric constant; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Oxygen; Scattering; Threshold voltage; high K oxide; metal gate; oxygen vacancy; work function;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    1-4244-0757-5
  • Electronic_ISBN
    1-4244-0757-5
  • Type

    conf

  • DOI
    10.1109/ICICDT.2007.4299548
  • Filename
    4299548
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3363513