Anomalous optical behaviour of LT-AlInAs related to anisotropic composition modulation

Author

Béarzi, E. ; Benyattou, T. ; Guillot, G. ; Marty, O. ; Pitaval, M. ; Oustric, M. ; Gendry, M. ; Hollinger, G. ; Harmand, J.C. ; Quillec, M.

Author_Institution

Inst. Nat. des Sci. Appliquees, Villeurbanne, France

fYear

1996

fDate

21-25 Apr 1996

Firstpage

19

Lastpage

22

Abstract

Optical measurements and Transmission Electron Microscopy (TEM) were performed on Low Temperature (LT)-AlInAs layers grown by MBE at 400°C and compared with AlInAs grown at 530°C. An anisotropic composition modulation is observed along the [1-10] direction for the low temperature samples. We studied the effects of the V-III BEP ratio on this modulation to explain the LT-AlInAs optical properties

Keywords

III-V semiconductors; aluminium compounds; indium compounds; molecular beam epitaxial growth; optical properties; photoluminescence; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; 400 C; 530 C; AlInAs; AlInAs optical properties; MBE growth; PL spectra; TEM; V-III BEP ratio; anisotropic composition modulation; anomalous optical behaviour; beam equivalent pressure ratio; low temperature AlInAs layers; optical measurements; transmission electron microscopy; Anisotropic magnetoresistance; Geometrical optics; Molecular beam epitaxial growth; Optical microscopy; Optical modulation; Optical sensors; Optical superlattices; Performance evaluation; Phase modulation; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.491923

Filename

491923