Abstract :
The pulse-time-modulated (TM) plasma could reduce the ultraviolet (UV) photon induced defects in SiO2 film during the plasma etching process. In the TM plasma, the radio-frequency (RF) power for discharging plasma was modulated at a pulse-timing of a few tens microseconds. During the pulse-off period, UV photons radiation drastically decreased by reduction of electron energy in the plasma. As a result, UV photon-induced defects in SiO2 film, such as E´ center, could be reduced in the case of using the TM plasma, as compared with CW plasma. Additionally, we found that the state of E´ center generated in the TM plasma had lower energy level than mat caused by the CW plasma. Then, lower temperature annealing was needed for the recovery of E´ center in the case of using TM plasma, whereas the CW plasma process needed higher temperature annealing These results clarified that the exciting state of UV photon-induced defects in SiO2 film could be lowered by using the TM plasma.
Keywords :
annealing; flaw detection; plasma deposited coatings; silicon compounds; sputter etching; ultraviolet radiation effects; SiO2; annealing; plasma etching process; plasma-induced damage; pulse-time-modulated plasma; radio-frequency power; ultraviolet photon induced defects; Annealing; Etching; Plasma applications; Plasma density; Plasma materials processing; Plasma sources; Plasma temperature; Pulse modulation; Radio frequency; Semiconductor films; Plasma materials-processing applications; Pulse time modulation; Semiconductor defects; Ultraviolet radiation effects;
