A Model for Negative Bias Temperature Instability in Oxide and High κ pFETs

Author

Zafar, Sufi

Author_Institution

T. J. Watson Res. Center, Yorktown Heights

fYear

2007

fDate

May 30 2007-June 1 2007

Firstpage

1

Lastpage

5

Abstract

A model for the negative bias temperature instability (NBTI) is proposed. Unlike previous empirical models, this model is derived from physics principles. The model attributes NBTI to de-passivation of SiO₂/Si interface and its two distinguishing features are: application of statistical mechanics to calculate de-passivated site density increase as a function of stressing conditions and the assumption that the hydrogen diffusion in oxide is dispersive. The model is verified using published NBTI data for SiO₂/poly, SiON/W and HfO₂/W pFETs. A comparison between high κ and conventional oxide is made.

Keywords

field effect integrated circuits; field effect transistors; SiO₂-Si; depassivated site density; depassivation; field effect transistor; hydrogen diffusion; negative bias temperature instability; statistical mechanics; stressing condition; Dispersion; Electron traps; Equations; High K dielectric materials; High-K gate dielectrics; Hydrogen; Negative bias temperature instability; Niobium compounds; Protons; Titanium compounds; Model; NBTI; high k/metal gate pFETs; oxide pFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on

Conference_Location

Austin, TX

Print_ISBN

1-4244-0756-7

Electronic_ISBN

1-4244-0757-5

Type

conf

DOI

10.1109/ICICDT.2007.4299550

Filename

4299550