Title :
Correct analytical model of the output characteristics of vertical power MOSFETs
Author :
Silard, Andret P. ; Duta, Miron J.
Author_Institution :
Dept. of Electron., Polytech. Inst., Bucharest, Romania
Abstract :
A correct analytical expression for the output characteristics of power MOSFET is deduced, and its main implications are outlined. This relationship could be used in the analysis of real power MOSFETs structures and of merged bipolar-MOS devices exhibiting MOS-type output characteristics (e.g. insulated gate bipolar transistors)
Keywords :
insulated gate field effect transistors; power transistors; semiconductor device models; IGBT; insulated gate bipolar transistors; merged bipolar-MOS devices; output characteristics; semiconductor device models; vertical power MOSFETs; Analytical models; Capacitance; Current-voltage characteristics; Electron mobility; Equations; Insulated gate bipolar transistors; MOS devices; MOSFETs; Transconductance; Voltage;
Conference_Titel :
Industry Applications Society Annual Meeting, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Houston, TX
Print_ISBN :
0-7803-0635-X
DOI :
10.1109/IAS.1992.244422
