Title :
Demonstration of OSAT compatible 300 mm through Si interposer
Author :
Ding, Lixin ; Liew, Linda ; Guan Kian Lau ; Hongyu Li ; Mingbin Yu ; Lo, G.Q.
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
Abstract :
We demonstrated fine pitch TSV interposer (TSI) with OSAT-only infra-structure. This provides an alternative commercial worth technology path given that OSAT can also offer a turnkey solution making 300 mm fine pitch TSV interposer. A comprehensive fabrication and characterization has been presented for process modules, integration, and fabricated interposers.
Keywords :
elemental semiconductors; fine-pitch technology; silicon; three-dimensional integrated circuits; vias; OSAT-only infrastructure; Si; fine pitch TSV interposer; process modules; size 300 mm; three-dimensional integrated circuits; Etching; Fabrication; Foundries; Lithography; Resistance; Through-silicon vias; Wiring;
Conference_Titel :
Electronics Packaging Technology Conference (EPTC 2013), 2013 IEEE 15th
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-2832-3
DOI :
10.1109/EPTC.2013.6745757
