Title :
Technology, Design, and Implementation of High-K MIM Capacitors for High di/dt Applications: Microprocessor, IO, and Clocking
Author :
Sánchez, Héctor ; Mandhana, Om P. ; Johnstone, Bill ; Roberts, Doug ; Siegel, Joshua ; Melnick, Brad ; Celik, Muhsin ; Baker, Mike ; Hayden, Jim ; Min, Byoung ; Edgerton, John ; White, Bruce
Author_Institution :
Freescale Semicond. Inc., Austin
fDate :
May 30 2007-June 1 2007
Abstract :
In this work a MIM capacitor used to decouple the internal power supply is shown. The 8fF/um2 planar MIM capacitors of the 90 nm SOI technology are formed by physical vapor deposition of alternating layers of HfO2 and Ta2O5 dielectrics between TaN electrodes.
Keywords :
MIM devices; capacitors; hafnium compounds; microprocessor chips; power supply circuits; silicon-on-insulator; tantalum compounds; HfO2-Ta2O5-TaN; MIM capacitors; SOI technology; dielectrics; internal power supply; microprocessors; physical vapor deposition; Capacitance; Circuits; Clocks; Electrodes; High K dielectric materials; High-K gate dielectrics; MIM capacitors; Microprocessors; Power supplies; Wires;
Conference_Titel :
Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
1-4244-0757-5
Electronic_ISBN :
1-4244-0757-5
DOI :
10.1109/ICICDT.2007.4299556
