Title :
Ferroelectric properties of Pt/SrRuO3/PLZT/Pt capacitors
Author :
Kobune, M. ; Matsuura, O. ; Matsuzaki, T. ; Mineshige, A. ; Fujii, S.
Author_Institution :
Dept. of Appl. Chem., Himeji Inst. of Technol., Hyogo, Japan
Abstract :
The microstructure, leakage current density-electric field characteristics and fatigue characteristics for epitaxial c-axis oriented (Pb0.925La0.075)(Zr0.4Ti0.6 )O3, (PLZT) ferroelectric capacitors with layered Pt/SrRuO3 (SRO) top electrodes were investigated on PLZT films with thickness ranging from 100 to 400 nm. The leakage current for Pt/SRO/PLZT/Pt capacitors exhibited a tendency to increase with decreasing film thickness. The values of switchable polarization after 1010 cycles for Pt/PLZT/Pt capacitors as reference samples decreased up to around 17% of respective initial values, whereas the switchable polarization for Pt/SRO/PLZT/Pt capacitors showed no fatigue degradation due to polarization reversal until 1010 cycles
Keywords :
dielectric hysteresis; dielectric losses; dielectric polarisation; ferroelectric capacitors; ferroelectric switching; ferroelectric thin films; lanthanum compounds; lead compounds; leakage currents; permittivity; platinum; strontium compounds; 100 to 400 nm; P-E hysteresis loops; Pt-SrRuO3-PbLaZrO3TiO3-Pt; Pt-SrRuO3-PLZT-Pt; Pt/SrRuO3/PLZT/Pt capacitors; SEM photographs; dielectric loss; epitaxial c-axis oriented (Pb0.925La0.075)(Zr0.4Ti0.6 )O3 ferroelectric capacitors; fatigue characteristics; fatigue degradation; ferroelectric properties; layered Pt/SrRuO3 top electrodes; leakage current density electric field characteristics; microstructure; polarization reversal; relative dielectric constant; switchable polarization; Capacitors; Degradation; Electrodes; Fatigue; Ferroelectric films; Ferroelectric materials; Leakage current; Microstructure; Polarization; Zirconium;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942386
